Project name: 
Development of a 3D laser characterisation method of semiconductor devices Two Photon Absorption Transient Current Techniques
Project image: 
Description: 

The project aims to develop a method and platform to extract doping and electric field profiles within semiconductor devices by non-destructive femtosecond laser induced Two-Photon Absorption. Several fields could benefit from this development, amongst them Quality Control & Assurance of semiconductor devices, E-Field and Charge Collection Efficiency mapping of photosensors, and radiation damage studies for high-energy physics detectors.

Budget: 
120 kCHF
Timeline: 
2017 -
Duration: 
24 months
Submission year: 
2017
Responsible Person: 
Name: 
Michael Moll

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