Project name: 
Development of a 3D laser characterisation method of semiconductor devices Two Photon Absorption Transient Current Techniques
Project image: 

The project aims to develop a method and platform to extract doping and electric field profiles within semiconductor devices by non-destructive femtosecond laser induced Two-Photon Absorption. Several fields could benefit from this development, amongst them Quality Control & Assurance of semiconductor devices, E-Field and Charge Collection Efficiency mapping of photosensors, and radiation damage studies for high-energy physics detectors.

This project is a collaboration between CERN and the Instituto de Física de Cantabria (CSIC-UC).

120 kCHF
2017 -
Submission year: 
Responsible Person: 
Michael Moll

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